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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1671 DESCRIPTION *With TO-3PML package *Complement to type 2SC4386 APPLICATIONS *Audio and general purpose PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION * Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -6 -8 -3 75 150 -55~150 UNIT V V V A A W PC Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1671 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 -120 V V(BR)EBO VCEsat Emitter-base breakdown voltage IE=-1mA; IC=0 IC=-3 A;IB=-0.3 A B -6 V Collector-emitter saturation voltage -0.5 V A A ICBO Collector cut-off current VCB=-120V; IE=0 -10 IEBO Emitter cut-off current VEB=-6V; IC=0 -10 hFE DC current gain IC=-3A ; VCE=-4V 50 180 fT Transition frequency IC=-0.5A ; VCE=-12V 20 MHz hFE classifications O 50-100 P 70-140 Y 90-180 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1671 Fig.2 Outline dimensions 3 |
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